No 1, Vol. 1, 2000 
 

HETEROEPITAXIAL GROWTH OF InAs ON Si: THE NEW TYPE OF QUANTUM DOTS


G.E. Cirlin 1,2, N.K. Polyakov 1,2 , V.N. Petrov 1,
V.A. Egorov 1, D.V. Denisov 2, B.V. Volovik 2,
V.M. Ustinov 2, Zh.I. Alferov 2, N.N. Ledentsov 2,3, R. Heitz 3,
D. Bimberg 3 , N.D. Zakharov 4, P. Werner 4, U. Gösele 4

1 Institute for Analytical Instrumentation RAS,
Rizhskiy pr. 26, 198103, St.Petersburg, Russia,
2 A.F.Ioffe Physico-Technical Institute RAS,
Polytechnicheskaya 26, 194021, St.Petersburg, Russia
3 Technical University,
Hardenbergstraße 36, 10623, Berlin, Germany
4 Max-Plank-Institute for Microstructure Physics,
Wecnberg 2, D-06120, Halle/Saale, Germany

Abstract

Under certain growth conditions InAs/Si heteroepitaxial growth proceeds via Stranski-Krastanow or Volmer-Weber growth modes depending on the growth parameters. The critical thickness at which three dimensional InAs islands start to appear at the Si(100) surface is within the range of 0.7-4.0 monolayers (substrate temperature range is 350 °C - 430 °C). Their size depends critically on the growth conditions and is between 5 nm and 80 nm (uncapped islands). Critical lateral size of the coherent (Si capped) dislocation-free island is equal to 2−5 nm depending on the island height. Islands having larger size are dislocated. Optical properties of InAs nanoscale islands capped with Si reveal a luminescence band in the 1.3 µm region.

full paper (pdf, 152 Kb)