|
The main task of the investigation was to perform the synthesis of gallium nitride
nanowires using a low pressure chemical vapor deposition system. The nanowires were grown
via a catalyst-assisted reaction based on the vapor-liquid-solid mechanism. The influence of
catalyst, temperature and pressure on the growth of gallium nitride nanowires was explored.
Optimal results were obtained at a temperature of 750°C
and at a pressure of 400 to
500 mTorr.
Keywords: gallium nitride; nanowires; chemical vapor deposition; photoluminescence; Raman spectra |
full paper (pdf, 11696 Kb)