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The new HVPE method has been developed for synthesis of semipolar gallium nitride on the substrate
of Si(100) deviated on 2œ-7œ from the direction <100>. The method is based upon the formation of
two buffer layers. First, the thin buffer layer (20-30nm) of SiC is formed, which is grown using
the technology of substitution of part of silicon atoms in substrate of Si by carbon atoms, then
the layer of AlN is deposited on this surface. It has been shown that the misorientation of Si
substrate from the direction <100> and formation of the thin SiC layer permit to form the epitaxial
layers of semipolar gallium nitride. The polar axis c of wurtzite crystal appeared to be deflected
by 55œ from the plane (100) of Si substrate. The obtained films of semipolar GaN had a half-width
of the rocking curve FWHM of the order of ω~24'. The thickness of GaN films was in the limits of 10-14 microns. The structure GaN/AlN/SiC/Si(100) formed during this process exhibited a bending of a cylindrical form. The formation of this bending is explained by anisotropy of the deformation of semipolar GaN on silicon.
Keywords: crystal structure; hydride vapor phase epitaxy; nitrides |
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