Mater.Phys.Mech.(MPM)
No 1, Vol. 27, 2016, pages 74-78

SIMULATION OPERATION REGIMES OF PASSIVE MODE-LOCKED LASER
BASED ON InGaAlAs/InGaAs/InP HETEROSTRUCTURES

I.S. Polukhin, G.A. Mikhailovskiy, D.A. Rybalko, Yu.V. Solov'ev, M.A. Odnoblyudov,
A.E. Gubenko, D.A. Livshits, A.N. Firsov, A.N. Kirsyaev,
A.A. Efremov, V.E. Bougrov

Abstract

We propose a model of passive mode-locking laser diode based on quantum wells. Numerical results for InGaAlAs/InGaAs/InP heterostructure with 4 quantum wells in active region are presented. The dynamics of the transition to mode-locking has been investigated. It has been shown that mode-locking occurs approximately within 30 ns. The pulse duration was amounted to 2 ps, average output power - to 9.4 mW. The appearance of the second harmonic radiation in the resonator is connected to the insufficient absorber relaxation rate

Keywords: passive mode-locked laser; InGaAlAs/InGaAs/InP heterostructures; simulation operation regimes.

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