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In the work, silicon films were obtained from SiH4 by plasma-enhanced chemical
vapors deposition. The influence of deposition temperature (200 - 650œC) and gas mixture
pressure (500 - 2000 mTorr, Ar/SiH4) on the mechanical stresses in the films were studied by
stylus profilometry and curvature method. Mechanical stresses in films with thickness changing
from 270 nm to 1.93 µm are in the range of -750 to +250 MPa. The deposition rates were
7 - 46 nm/min irrespective of temperature at 500 mTorr. Temperature dependences had inflection
close to 450œC. Low-stressed (tensile and compressive) and stress-free films can be formed and
qualified for solar cells fabrication, based on textured silicon, glass or flexible substrates as well
as for micro- and nanomechanics, particularly relatively thick films of 1 - 2 µm, obtained at
2000 mTorr and rates about of 50 nm/min.
Keywords: mechanical stress; silicon film; SiOx; PECVD; profilometry. |
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