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Computer simulations of fabrication processing p-and n-channel junction field-effect
transistor with design norms of 1.5 µm is presented. Corrections to parameters of Klassen
mobility model are proposed. They ensure the correspondence between calculated current-voltage
characteristics and experimental data. For the investigated device structures of JFET, an analysis
of the influence of various types of penetrating radiation on electrical characteristics is carried
out. Optimization calculations gave the modes of processing procedure, which reduce the effect
of the neutron flux with energy 1.5 MeV on the electrical characteristics of n-JFET device
structure by 1.45 times.
Keywords: computer simulation, current-voltage characteristic, field-effect transistor, neutron, radiation |
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