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Gold-free GaAs nanomembranes have proven ideal templates for further growth of
in-plane III-V nanowires. Recently, it has been demonstrated that high quality InAs nanowires
with a low defect density can be obtained on top of GaAs nanomembranes by molecular beam
epitaxy in wafer-scale approach and provide an excellent platform for future investigations
into one-dimensional transport and quantum computation. Here, we develop a model to
explain why InAs NWs form spontaneously on the top ridges of GaAs nanomembranes and
not elsewhere. We speculate that the driving force for this growth mechanism is the free
energy minimization including the elastic and surface energy contributions.
Keywords: InAs nanowires, GaAs nanomembranes, elastic stress relaxation, growth model |
full paper (pdf, 768 Kb)