We present an energetic model to describe the initial stage of growth of GaAs
nanowire seeds in SiOx/Si (111) templates. The model explains the experimentally observed
geometry of GaAs seed crystal emerging from Ga droplets in the holes, with either stepwise
or ring geometry at the outer periphery of the holes and restricted by the steps that are much
larger than monoatomic. Understanding and controlling this geometry is crucial for further
growth of nanowires, improving their vertical yield and optimizing the morphology and
crystal structure.
Keywords: GaAs nanowires, Ga droplet, elastic stress relaxation, surface energy, silicon templates |
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