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Crystalline structure and composition of the ZnO films grown by atomic layer
deposition (ALD) on the n- and p-type Si (100) substrates with a SiC buffer layer were
studied. The SiC buffer layers have been synthesized by a novel method of atomic
substitution (partial chemical replacement) of Si atoms by carbon atoms in the subsurface
layer of the Si substrate. A four-component epitaxial texture of ZnO in a direction close to
[101] on the n- and p-type (100) Si vicinal substrates with a SiC buffer layer has been
revealed and investigated with electron diffraction. Formation mechanism of the epitaxial
textures of ZnO was found to depend on the conductivity type (n- or p-type) of the Si (100)
substrates. A theoretical model explaining the effect of the texture formation and its
dependence on the type of Si substrate conductivity has been proposed. The effect is
associated with the transformation of the vicinal Si (100) surfaces into the SiC surfaces during
its synthesis by the atomic substitution method. Significant differences have been found
between the structures and between the growth mechanisms of the ZnO layers on the
SiC/Si (111) and (100) substrates.
Keywords: zinc oxide films, ALD method, silicon carbide; epitaxy; thin film growth |
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