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In this study, SiC was deposited on carbon/carbon (C/C) composite substrate using
chemical vapor deposition (CVD) method to investigate the kinetics of the deposition process.
Therefore, the time, temperature, precursor composition (SiCl4:N2:CH4) and substrate position
in the reactor were varied to evaluate the deposition rate. X-ray diffraction (XRD) method
was used to characterize the phase composition and calculate the grain size and the texture
coefficient of the coatings. Field emission scanning electron microscopy (FESEM) was
utilized to observe the coating morphology, microstructure and thickness. As observed β-SiC
was the dominant phase of the coating with varied preferred growth crystalline planes of
(111), (220) or (311). The coating thickness was 2 µm and 5 µm for the samples treated at
1000 and 1100°C, respectively
Keywords: chemical vapor deposition, boundary layer, deposition rate, SiC coating, C/C composite |
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