No 1, Vol. 5, 2002 
 

NANOSTRUCTURED LAYERS IN HIGH
TEMPERATURE - PRESSURE TREATED SILICON
IMPLANTED WITH HYDROGEN / HELIUM

A.Misiuk1, J.Bak - Misiuk2, M.Kaniewska1, K.S.Zhuravlev3, V.Raineri4 and I.V.Antonova3

1 Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland
2 Institute of Physics, Polish Academy of Sciences,
Al. Lotnikow 46, 02-668 Warsaw, Poland
3Institute of Semiconductor Physics, RAS, pr. Lavrentieva 13,
Novosibirsk 630090, Russia
4 CNR - IMETEM, Stradale Primosole 50, 95121 Catania, Italy

Abstract

Structural, electrical and photoluminescence properties of single crystalline silicon implanted with hydrogen and helium, Si:H and Si:He (ion doses <= 5x1016 cm-2, energy, E <= 200 keV) and subjected to annealing at up to 1470K under hydrostatic pressure up to 1.2 GPa were investigated. The temperature - pressure (HT - HP) treatment of Si:H and Si:He results in creation of nanostructured buried layers containing gas - filled cavities and numerous extended and point defects; the HT - HP treated Si:H structures are not splitted contrary to those annealed under atmospheric pressure. The HT - HP induced effects are related to creation of smaller, nanometer - sized structural defects and to retarded out - diffusion of hydrogen and helium at HP. The buried layers are active in respect of oxygen gettering. The Si:H and Si:He samples indicate visible photoluminescence after subjecting to specific HT - HP treatment.

full paper (pdf, 336 Kb)