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Results of computer simulation of manufacturing a bipolar transistor with insulated
gate (IGBT) on the base of technology "Silicon on insulator" (SOI) are presented. Current-
voltage characteristics of the investigated IGBT device were calculated. The results obtained
were used as a base for optimization of the most significant technological parameter, a gate
oxide thickness. It is shown that the gate oxide thickness has a significant impact on
the electrical characteristics of the IGBT. The calculated values of the switch-on and switch-off
times less than one order, and the value of the collector current is more than two orders of
magnitude for the vertical structure of the IGBT based on bulk silicon in comparison with
IGBT on SOI structure.
Keywords: IGBT; SOI; computer simulation of manufacturing |
full paper (pdf, 1120 Kb)