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Electronic structure of the SiC epitaxial nanolayer synthesized by a new method of
the atom substitution in silicon crystal lattice has been first studied in situ in an ultrahigh
vacuum using synchrotron radiation photoemission spectroscopy with photon energies in the
range of 60-400 eV. Features of photoemission from the valence band and from both the
Si 2p, C 1s core levels were revealed and shown to be provided by the high-quality clean
SiC(111) sample with Si-rich surface. The photoemission from a surface state extending from
the valence band maximum into gap was found. Three surface-related components of Si 2p
core level were found. Only one surface component of the C 1s core level was found that
indicates on one position of C atoms near the surface. The results support the full Si adlayer
structure model of the SiC (111) surface that is characterized by Si- double layers, Si-dimers
and Si adatoms.
Keywords: silicon carbide; electronic structure; photoemission spectroscopy |
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