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Silicon carbide nanocrystals embedded in a SiO2 matrix on monocrystalline Si
substrates were prepared by radio frequency (RF) co-sputtering with Si, C
and SiO2 targets, and subsequent high-temperature annealing. The structure
of the films was determined by Fourier transform infrared spectroscopy.
Photoluminescence (PL) from the composite films was studied as a function of
annealing temperature. It was found that the PL spectra of the films are
very sensitive to the annealing temperature. Blue band (490nm) and green
band (~546nm) visible PL, originating from SiC nanoparticles and C
nanoclusters, respectively, were observed at room temperature.
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