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Efficacy of high power light emitting diodes (LEDs) strongly depends on their
thermal management. Heat generated due to non-radiative recombination of carriers in LED
active region and due to Stokes losses in phosphor material leads to temperature rise in the
device interior and in the phosphor containing silicone layer (PCSL). High temperature in the
PCSL influences its thermal quenching behavior and changes luminescence decay time. To
achieve high LED efficacy, proper thermal control of PCSL is of the great importance. In this
study, we build a thermal model of the LED with PCSL and perform numerical simulations to
analyze the heat distribution in the layer. Numerical analysis shows that temperature of PCSL
can reach 85 °C and more. At least 30 % temperature drop is demonstrated due to the
thickness variation of silicone layer.
Keywords: LED; phosphor containing silicone layer: thermal analysis |
full paper (pdf, 1376 Kb)