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Semiconductor-metal nanowire heterostructures have attracted a particular interest
over the last decade. However, they often suffer from low interface and crystalline quality.
Here, we present a model for the formation of GaAs-Au axial nanowire heterostructures from
GaAs/Au core-shell nanowires encapsulated into SiO2 under flash lamp annealing, as
described in the previous work. The model reveals the basic mechanism and establishes the
main control parameters of the process which enable high quality GaAs-Au heterostructures.
It can also be used for the optimization of similar processes in a wide range of material
combinations.
Keywords: GaAs-Au nanowire heterostructures, SiO2 template, flash lamp annealing, phase diagram, modeling |
full paper (pdf, 864 Kb)