| A theoretical model is suggested which describes a special mechanism for emission of grain boundary (GB) dislocations by nanovoids (nanoscale voids) in plastically deformed polysilicon materials. In the framework of the model, GB dislocations are emitted from nanovoids by ideal nanoscale shear events under the shear stress action. The characteristic values of the flow stress needed to initiate GB dislocation emission from nanovoids are estimated and shown to be close to those that characterize plastic flow in polysilicon. With the results of the suggested theoretical model, evolution of nanovoids along GBs in polysilicon materials at quasistatic and fatigue load regimes is discussed. |
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