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The electrical and ozone sensor response characteristics of indium oxide, prepared
by dc sputtering, are reviewed in this work. The electrical conductivity of these films is
compared to those obtained from other deposition techniques, and found to depend upon the
synthesis technique and the deposition parameters. Our sputtered-InOx films exhibit
conductivity changes of up to seven orders of magnitude under the processes of
photoreduction and oxidation. A conductivity value of
(σ = 1.5 x 102 Ω-1cm-1 has been achieved
at room temperature, which provides the possibility to use this material as interconnect in
ICs and as a sensor at ambient conditions without additional heating. The sensing properties
towards ozone of these films are also investigated. Optimum operating temperatures have been
found where the response to ozone of InOx is greater and stable.
The best performance of the
sensitivity of our films is found at room temperature, and is of the order
of 4 x 106. This
can be applied in promoting them as promising gas sensor devices for ozone operating at
ambient conditions.
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