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1 Department of Chemical Engineering and Materials Science &
Department of Electrical Engineering and Computer Science,
California, Irvine, CA 92697
2 Department of Materials Science, Fudan University, Shanghai 200433, P. R. China
| Thin films and nanowires based on an organometallic material Ag-TCNQ were prepared. Electrical properties of Ag-TCNQ thin film were investigated at the nanoscale using a scanning tunneling microscope and electrical memory effect was observed. Nanodevices based on Ag-TCNQ nanowire were fabricated using electron beam lithography technique. Their I-V characteristics show similar electrical memory effect as the thin film but with much higher switching voltage threshold and resistance change ratio. Ag-TCNQ nanowires hold high potential for ultra-high density information storage and switching devices. |
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