| The persistent photoenhancement (PPE) of the mobility of the two-dimensional electron gas (2DEG) dwelling within a typical functional semiconductor nanoheterointerface (NHI) is processed to yield the energetic separation between the fundamental and first excited conduction subband of the NHI quantum well (QW). Upon that, a finite difference method NHI wave function (WF) engineering is employed to determine the crucial optoelectronic parameter of NHI WF penetration length (into the QW energetic barrier layer) tantamount to the 2DEG mobility behavior, a satisfactory agreement with alternatively obtained values for this parameter being reached. |
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