| New form of composite materials as semiconductor dielectric layer with radioisotope inclusions is presented in this paper. The presence of additional generators of ionization in semiconducting material (due to a-particles irradiated by radioisotope inclusions) causes the essentially nonequilibrium characteristics of composite materials: increase of absorption factor, changes of real component of permittivity, and nonlinearity phenomenon of conductivity. The generalized kinetic equation is proposed to describe nonequilibrium stationary states of the electronic subsystem of radioisotope composite covering. It is shown that nonequilibrium states of electrons in the covering are solutions of this equation and have the power asymptotic forms. |
full paper (pdf, 114 Kb)