| The amorphous alloys Ni59Zr20Ti16M5 ( M = Nb, Si ) are precursors for bulk amorphous materials with broad supercooled region. Temperature dependence of electrical resistivity and thermoelectric power in a broad temperature range are analyzed in a framework of the Boltzmann and localization models. The low temperature variation of electrical resistivity reveals a strong quantum interference effect observable even above the Debye temperature. Additional influence of the phonon assisted electron tunneling and hopping processes on electrical resistivity and thermoelectric power at high temperatures are discussed. The stronger localization effects are observed in Nb than in the Si containing alloy, which is related to the electronic structure of these elements. An influence of electron structure on thermal stability of alloys is also observed. |
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