| A formalism developed earlier for the magnetoresistance exhibited by a conducting material, in the form of a parallelepiped , under bias and subjected to a perpendicular magnetic field is shown to apply, with certain modification regarding the dissipative energy, in the case whereby the carriers are constrained in a way as to form a two dimensional gas. The values of the magnetic field around which the longitudinal resistance rises for high enough fields are more or less obtained on the basis of ordinary Fermi-Dirac statistics. The same applies for the magnetic field values corresponding to integer filling factors. Furthermore, the effect of diminishing resistance peaks with increasing magnetic field is also demonstrated. The work has been carried out at absolute zero temperature. |
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