ITO covered glass was used as a substrate for the laser epitaxy of pentacene (C22H14) films. A different orientation of the substrate with respect to the pentacene plasma plume was applied. Thin films of pentacene were deposited using a YAG:Nd3+ laser with a second harmonic (λ=532 nm). The electrical properties of the structures were analyzed on the base of the current-voltage characteristics. The current-voltage characteristics are explained in relation to the molecular structure properties of the pentacene films as well as the pentacene/contact, pentacene/substrate interface. The carrier transport mechanisms for different interfaces and structures are presented. |
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