|
A theoretical model is suggested which describes quantum dot ensembles
of the new type, namely the quantum dot arrays with defects. These defects represent
local violations of the geometry of 2D arrays formed by quantum dots on crystalline
substrates. The elastic moduli of strained arrays of quantum dots are estimated, in
which case strains describe deviations of spatial positions of quantum dots from nodes
of ideal square arrays. The formulas for characteristic energies of dislocations,
disclinations and point defects in 2D arrays of quantum dots are derived. It is shown
that point defects are characterized by comparatively low values of the formation
energy and, therefore, are capable of being intensively formed in quantum dot arrays
fabricated at highly non-equilibrium conditions.
|