1 Department of Materials Science and Engineering, National Chiao Tung University, HsinChu,
30050, Taiwan
2 Department of Materials Science and Engineering, National Huwei Institute of Technology,
Yunlin 632, Taiwan
| Si-C-N films were synthesized on Si substrates by microwave plasma chemical vapor deposition (MPCVD) with a mixture of CH4 and N2 as gaseous sources, and Co-coated Si columns to act as a catalyst and an additional Si source. Two conditions, conditions 1 and 2, were implemented by varying the time at which the solid sources were introduced. Under condition 1, the solid sources were applied "before" film deposition. Under condition 2, the solid sources were applied both "before and during" film depositions. Analytical results indicate, although that both conditions yield crystalline Si-C-N films, the time at which the solid sources are applied is critically affects the films' structures and properties. Synthesizing Si-C-N films under condition 1 yields crystals with more re-nucleation, a structure closer to a pseudo T-Si3N4 structure, a higher C content, detectable Si(2p)-C bonding, lower nano-hardness and better field emission properties. Synthesis of film under condition 2 yields, crystals with more facets, a structure closer to pseudo α-Si3N4, and an additional thin layer under the crystalline layer. SEM, TEM, XPS, XRD, nanoindentor and field emission were used to characterize the film' structures and properties. |
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