Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity
Авторы:
N.N. Yakovlev , A.V. Almaev , P.N. Butenko , A.N. Mikhaylov , A.I. Pechnikov , S.I. Stepanov , R.B. Timashov , A.V. Chikiryaka , V.I. Nikolaev ,
Страницы:
301-307
ДОИ (doi):
Аннотация:
The effect of 
ion irradiation of 
at doses of 
, 
, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of layer grown by halide vapor phase epitaxy with implanted ions allows effective control of its sensitivity to 
, response, and recovery times, as well as varying the operating temperatures. The maximum sensitivity to occurred for samples with ion irradiation dose of at 400ºC. The mechanism of sensitivity of epitaxial layers irradiated with to is discussed.
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