Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity
Авторы:
N.N. Yakovlev , A.V. Almaev , P.N. Butenko , A.N. Mikhaylov , A.I. Pechnikov , S.I. Stepanov , R.B. Timashov , A.V. Chikiryaka , V.I. Nikolaev ,
Страницы:
301-307
ДОИ (doi):
Аннотация:
The effect of ion irradiation of
at doses of
,
, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of
layer grown by halide vapor phase epitaxy with implanted
ions allows effective control of its sensitivity to
, response, and recovery times, as well as varying the operating temperatures. The maximum sensitivity to
occurred for samples with
ion irradiation dose of
at 400ºC. The mechanism of sensitivity of
epitaxial layers irradiated with
to
is discussed.
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