The measurement data and a general approach to the analysis of the field dependencies of magnetization of the hybrid SiC/Si structure grown by the vacancy method of coordinated substitution of atoms (VMCSA) are presented. The experimental results can be interpreted as a set of additive contributions to the magnetization of the sample. The analysis of the field dependences of magnetization allowed us to identify a presence of paramagnetic impurities in the sample under study and an inclusion that demonstrates characteristic features of ferromagnetic ordering. It is shown than the value of the specific diamagnetic mass susceptibility of the main SiC/Si substance determined from experimental data cannot be described by the simple additive contribution of silicon and silicon carbide.