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МИНОБРНАУКИ РОССИИ
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Институт проблем машиноведения Российской академии наук

МИНОБРНАУКИ РОССИИ
Федеральное государственное бюджетное учреждение науки
Институт проблем машиноведения Российской академии наук

Silicon nanomagnetism

Авторы:
N.T. Bagraev, N.A. Dovator, L.E. Klyachkin ,
Страницы:
001-006
ДОИ (doi):
Аннотация:

The paper studied the dependence of the magnitude of the magnetic field induced in the contour formed by the edge channels of the silicon nanosandwich structure on the magnitude of the external magnetic field used for pre-magnetization. The measurements were carried out using a fluxgate magnetometer inside a magnetic screen, which ensures the value of the variation in the magnetic field induction no more than 0.1 nT. The experimental results obtained are in good agreement with preliminary estimates that take into account the energy of negative-U dipoles, and thus confirm the defining role of the spin–orbit interaction in quantum transport in the edge channels of the silicon nanosandwich structure. The presence of nanomagnetism in the contour of the edge channels of nanosandwich structures based on the classical semiconductor silicon, which were created using planar technology methods widely used to create processors and various integrated circuits, is demonstrated for the first time.

Файл (pdf):
19:07
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