Spalling-induced β-Ga2O3 lift-off protocol
Авторы:
P.N. Butenko, A.V. Chikiryaka, M.E. Boiko, L.I. Guzilova, V.M. Krymov,
B.A. Obidov, R.B. Timashov, S.V. Shapenkov, M.D. Sharkov, V.I. Nikolaev ,
Страницы:
055–063
ДОИ (doi):
Аннотация:
Fabrication of gallium oxide 1–100 μm-thick layers by exfoliation them from single crystals opens up the way to provide good thermal management in high-power Ga2O3 devices. Here we propose a lift-off protocol based on spalling of homoepitaxial layers from (100) β-Ga2O3 bulk crystal. The process includes sputtering of Ni sacrificial mask on β-Ga2O3 substrate and its modification by annealing, prior to epitaxial layer deposition in mist-CVD reactor. The separated 4 μm-thick β-Ga2O3 layers have been studied. It is shown that implementation of the lift-off protocol allows obtaining high-quality free-standing layers.
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