Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3
Год(ы):
2018
Авторы:
Название издания:
IOP Conference Series: Materials Science and Engineering
Том издания:
387
Выпуск издания:
1 / 012044