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Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences

Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

Autors:
N.N. Yakovlev , A.V. Almaev , P.N. Butenko , A.N. Mikhaylov , A.I. Pechnikov , S.I. Stepanov , R.B. Timashov , A.V. Chikiryaka , V.I. Nikolaev ,
Pages:
301-307
Annotation:

The effect of  ion irradiation of  at doses of , and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of  layer grown by halide vapor phase epitaxy with implanted  ions allows effective control of its sensitivity to , response, and recovery times, as well as varying the operating temperatures. The maximum sensitivity to  occurred for samples with  ion irradiation dose of  at 400ºC. The mechanism of sensitivity of  epitaxial layers irradiated with  to  is discussed.

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