HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer
Autors:
S.I. Stepanov, V.I. Nikolaev, A.V.Almaev, A.I.Pechnikov, M.P. Scheglov, A.V. Chikiryaka, B.O. Kushnarev, A.Y. Polyakov
Pages:
577-581
Annotation:
Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without 
buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of 
and 
phases with a dislocation density of about 
The insertion of 
buffer layers resulted in phase-pure 
films and a fourfold reduction of the dislocation density to 
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