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Институт Проблем Машиноведения РАН ( ИПМаш РАН ) Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences
  2. Research Activity
  3. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

Year(s):
2014
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. ,
Name Publication:
Journal of Physics D: Applied Physics
Volume Publication:
47
Issue Publication:
31 / 313001
DOI:
https://doi.org/10.1088/0022-3727/47/31/313001
Web address:
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84904430756&doi=10.1088%2f0022-3727%2f47%2f31%2f313001&partnerID=40&md5=0c7a0ea34bddc014d1f46e451a67d50f
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