Dr. Elena Osipova - Senior Researcher - Laboratory for Mathematical Modelling of Wave Phenomena

List of previously obtained main scientific results

1. The theory of localization of both linear and nonlinear waves in elastic media with inclusions is constructed.

2. The dynamics of the process of hydrogen embrittlement of metals under the action of load has been studied. A statistical model of hydride phase formation in hydrogen embrittlement of metals under the action of loading has been constructed.

3. Two-temperature model of optical excitation of sound in metals is constructed. Quantitative correspondence between the developed model and experimentally measured photoacoustic pulse shapes for copper and aluminium has been established.

4. Fluctuation embrittlement of aluminium caused by hydrogen has been studied. The formation of hydrogen surface layer in pure aluminum has been studied. An exhaustive analysis of hydrogen resistance of aluminium and aluminium alloys is given by ab-initio methods. It is shown that tungsten and rhenium are the most effective additives increasing the hydrogen resistance of aluminium.

5. Anisotropic elastic and optical characteristics of three different phases of a new semiconductor material Ga2O3, namely, alpha, beta, epsilon phases have been studied by ab initio methods and qualitative correspondence of the obtained results to experimental data has been established. Reconstructive phase transitions during annealing from alpha to beta phase and from epsilon to beta phase have been studied. Qualitative correspondence between the modeling results and experimental results has been established.

6. The phenomenon of self-organized change in the composition of epitaxial layers of AlxGa1-xN solid solution during their growth by chloride-hydride epitaxy has been studied.

7. The mechanism of migration of CO and SiO molecules in silicon carbide during the growth of heterostructures has been studied by ab-initio methods.

8. Spintronic properties of the interface between Si(111) and 3C-SiC(111) grown on Si(111) by the method of coordinated atom substitution have been studied by ab-initio methods.