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Институт Проблем Машиноведения РАН ( ИПМаш РАН ) Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences

Magnetism of the hybrid SiC/Si structure grown on silicon surface

Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , V.V. Romanov, N.I. Rul', V.E. Gasumyants, I.D. Venevtsev, K.B. Taranets, A.V. Korolev, N.T. Bagraev ,
Pages:
159–164
Annotation:

low-dimensional hybrid structure of silicon carbide grown on silicon by the vacancy method of coordinated substitution of atoms based on the measurements of its magnetic characteristics – magnetic susceptibility and magnetization is studied. The measurements were carried out on the Quantum Design MPMS XL SQUID (superconducting quantum interferometer), M.N. Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences, Ekaterinburg, and Faraday Balance (Faraday method), Peter the Great St. Petersburg Polytechnic University, St. Petersburg. The results of magnetization field dependences measurement, carried out by two experimental setups, clearly confirm the reliability of the obtained results.

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