Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silico
Year(s):
2012
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Zhukov S.G. , Zavarin E.E. , Lundin W.V. , Sinitsyn M.A. , Rozhavskaya M.M. , Tsatsulnikov A.F. , Troshkov S.I. , Feoktistov N.A. ,
Name Publication:
Technical Physics Letters
Volume Publication:
38
Issue Publication:
3
Pages:
297 - 299