Structural characterization of GaN epilayers on silicon: Effect of buffer layers
Year(s):
2011
Autors:
Sorokin L.M. , Kalmykov A.E. , Bessolov V.N. , Feoktistov N.A. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A. , Veselov N.V. ,
Name Publication:
Technical Physics Letters
Volume Publication:
37
Issue Publication:
4
Pages:
326 - 329