Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs
Year(s):
2009
Autors:
Bert N.A. , d.o.p.a.m.s. Anna L. Kolesnikova , Nevedomsky V.N. , Preobrazhenskii V.V. , Putyato M.A. , Romanov A.E. , Seleznev V.M. , Semyagin B.R. , Chaldyshev V.V. ,
Name Publication:
Semiconductors
Volume Publication:
43
Issue Publication:
10
Pages:
1387 - 1393