Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer
Year(s):
2008
Autors:
Aksyanov I.G. , Bessolov V.N. , Zhilyaev Yu.V. , Kompan M.E. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rodin S.N. , Feoktistov N.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P. ,
Name Publication:
Technical Physics Letters
Volume Publication:
34
Issue Publication:
6
Pages:
479 - 482