Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface
Year(s):
2016
Autors:
Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , Lapushkin M.N. , d.o.p.a.m.s. Osipov A.V. , Timoshnev S.N. ,
Name Publication:
Technical Physics Letters
Volume Publication:
42
Issue Publication:
12
Pages:
1145 - 1148