The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(1
Year(s):
2016
Autors:
Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , Lapushkin M.N. , d.o.p.a.m.s. Osipov A.V. , Senkovskiy B.V. ,
Name Publication:
Semiconductors
Volume Publication:
50
Issue Publication:
10
Pages:
1327 - 1332