Growth of epitaxial SiC layer on Si (100) surface of n- and p-type of conductivity by the atoms subs
Year(s):
2017
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , I.P. Soshnikov
Name Publication:
Reviews on Advanced Materials Science
Issue Publication:
52
Pages:
29-42