Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and str
Year(s):
2015
Autors:
Bessolov V.N. , c.o.p.a.m.s. Grashchenko A.S. , Konenkova E.V. , Myasoedov A.V. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Rodin S.N. , Rubets V.P. , d.o.p.a.m.s. Kukushkin S.A. ,
Name Publication:
Physics of the Solid State
Volume Publication:
57
Issue Publication:
10
Pages:
1966 - 1971