Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitut
Year(s):
2015
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rozhavskaya M.M. , Myasoedov A.V. , Troshkov S.I. , Lundin V.V. , Sorokin L.M. , Tsatsul’nikov A.F. ,
Name Publication:
Physics of the Solid State
Volume Publication:
57
Issue Publication:
9
Pages:
1899 - 1907