Investigation of properties of epitaxial nanosized SiC phases formed on Si by the method of coordinated substitution of atoms, and study of the influence of these properties on the growth mechanisms and morphology of semiconductor
Header:
Worker:
d.o.p.a.m.s. Osipov A.V. , Баграев Н.Т.
Number:
№20-12-00193
Year(s):
2020-н.в.
Web address: