Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer
Year(s):
2014
Autors:
Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Myasoedov A.V. , d.o.p.a.m.s. Osipov A.V. , Rodin S.N. , Shcheglov M.P. , Feoktistov N.A. ,
Name Publication:
Technical Physics Letters
Volume Publication:
40
Issue Publication:
5
Pages:
386 - 388