The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthe
Year(s):
2014
Autors:
Bessolov V.N. , Konenkova E.V. , Zubkova A.V. , d.o.p.a.m.s. Osipov A.V. , Orlova T.A. , Rodin S.N. , d.o.p.a.m.s. Kukushkin S.A. ,
Name Publication:
Materials Physics and Mechanics
Volume Publication:
21
Issue Publication:
3
Pages:
266 - 274