Semipolar GaN on SI(001): The role of SiC buffer layer synthesized by method of substrate atom subst
Year(s):
2014
Autors:
Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Myasoedov A.V. , Rodin S.N. , d.o.p.a.m.s. Osipov A.V. , Shcheglov M.P. ,
Name Publication:
Materials Physics and Mechanics
Volume Publication:
21
Issue Publication:
1
Pages:
71 - 77