Properties of SiC films obtained by the method of substitution of atoms on porous silicon
Year(s):
2018
Autors:
V.V. Kidalov , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , A.S. Grashchenko , I.P. Soshnikov , M.E. Boiko , M.D. Sharkov , A.F. Dyadenchuk ,
Quarter:
Q1
Name Publication:
ECS journal of solid state science and technology
Issue Publication:
7
Pages:
158-160
Web address: